MG7210WZ
1200V 25A Insulated Gate Bipolar Transistor
VCES IC (Nominal) VCE(sat) (Typ.)
Max. Possible Chips per Wafer
1200V 25A 1.7V
407pcs l Features 1) Trench Light Punch Through Type
2) Low Collector
- Emitter Saturation Voltage
3) Short Circuit Withstand Time 10μs l Outline
Wafer l Inner Circuit
(2) (1) l Application General Inverter for Automotive and Industrial Use Heater for Automotive
(3)
(1) Gate (2) Collector (3) Emitter l Absolute Maximum Ratings Parameter
Collector
- Emitter Voltage, Tj = 25°C Gate
- Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature
- 1 Depending on thermal properties of assembly
- 2 Pulse width limited by Tjmax.
Symbol VCES VGES IC- 1 ICP- 2 Tj
Value 1200 ±30
- 1)
75 -40 to +175
Unit V V A A °C
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1/3
- Rev.A
Datasheet l Design Assurance
Parameter
Symbol
Conditions
Short Circuit Withstand Time
VCC ≦ 600V, tsc- 3 VGE = 15V,
Tj =...
