MH2107WZ - Fast Recovery Diode

ROHM

Key Features

1) Light Punch Through Type 2) Low Forward Voltage 3) Very Fast & Soft Recovery 4) Low Recovery Loss 650V 60A 1.45V 882pcs l.

MH2107WZ fast recovery diode by ROHM - Datasheet Preview

Datasheet Details

Part number	MH2107WZ
Manufacturer	ROHM
File Size	442.70 KB
Description	Fast Recovery Diode
Datasheet	MH2107WZ Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MH21	Micro PowerHall Effect Sensors	Standex Meder
MH2009	MH2009 / MH2009A	ETC
MH2009A	MH2009 / MH2009A	ETC
MH2029-070Y	High Current Chip Ferrite Beads	Bourns
MH2029-100Y	High Current Chip Ferrite Beads	Bourns

Other Datasheets by ROHM

Part Number	Description
MH2101WZ	Fast Recovery Diode
MH2102WZ	Fast Recovery Diode
MH2201WZ	Fast Recovery Diode
MH2205WZ	1200V 50A Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MH2107WZ 650V 60A Fast Recovery Diode VRM IF (Nominal) VF (Typ.) Max. Possible Chips per Wafer lFeatures 1) Light Punch Through Type 2) Low Forward Voltage 3) Very Fast & Soft Recovery 4) Low Recovery Loss 650V 60A 1.45V 882pcs lApplication Free Wheeling lOutline Wafer lInner Circuit (1) (2) Datasheet (1) Anode (2) Cathode lAbsolute Maximum Ratings Parameter Repetitive Peak Reverse Voltage, Tj = 25°C Forward Current Pulsed Forward Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VRM IF*1 IFP*2 Tj Value 650 *1) 240 -40 to +175 Unit V A A °C lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max.