MH2107WZ
650V 60A Fast Recovery Diode
VRM
IF (Nominal)
VF (Typ.)
Max. Possible Chips per Wafer
lFeatures
1) Light Punch Through Type
2) Low Forward Voltage
3) Very Fast & Soft Recovery
4) Low Recovery Loss
650V
60A
1.45V
882pcs
lApplication
Free Wheeling
lOutline
Wafer
lInner Circuit
(1)
(2)
Datasheet
(1) Anode
(2) Cathode
lAbsolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage, Tj = 25°C
Forward Current
Pulsed Forward Current
Operating Junction Temperature
*1 Depending on thermal properties of assembly
*2 Pulse width limited by Tjmax.
Symbol
VRM
IF*1
IFP*2
Tj
Value
650
*1)
240
-40 to +175
Unit
V
A
A
°C
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Breakdown Voltage
BV IR = 10μA
650 -
-V
Reverse Current
IR VR = 650V
Forward Voltage
IF = 60A,
VF*3 Tj = 25°C
Tj = 175°C
*3 Design assurance without measurement
- - 10 μA
- 1.45 1.9 V
- 1.55 -
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2019.08 - Rev.A
