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MH2102WZ - Fast Recovery Diode

Key Features

  • 1) Light Punch Through Type 2) Low Forward Voltage 3) Very Fast & Soft Recovery 4) Low Recovery Loss l.

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Datasheet Details

Part number MH2102WZ
Manufacturer ROHM
File Size 442.51 KB
Description Fast Recovery Diode
Datasheet download datasheet MH2102WZ Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MH2102WZ 650V 50A Fast Recovery Diode VRM IF (Nominal) VF (Typ.) Max. Possible Chips per Wafer 650V 50A 1.45V 1040pcs lFeatures 1) Light Punch Through Type 2) Low Forward Voltage 3) Very Fast & Soft Recovery 4) Low Recovery Loss lApplication Free Wheeling lOutline Wafer lInner Circuit (1) (2) Datasheet (1) Anode (2) Cathode lAbsolute Maximum Ratings Parameter Repetitive Peak Reverse Voltage, Tj = 25°C Forward Current Pulsed Forward Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VRM IF*1 IFP*2 Tj Value 650 *1) 200 -40 to +175 Unit V A A °C lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max.