The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MH2102WZ
650V 50A Fast Recovery Diode
VRM IF (Nominal) VF (Typ.)
Max. Possible Chips per Wafer
650V 50A 1.45V 1040pcs
lFeatures 1) Light Punch Through Type
2) Low Forward Voltage
3) Very Fast & Soft Recovery
4) Low Recovery Loss
lApplication Free Wheeling
lOutline
Wafer
lInner Circuit
(1)
(2)
Datasheet
(1) Anode (2) Cathode
lAbsolute Maximum Ratings Parameter
Repetitive Peak Reverse Voltage, Tj = 25°C Forward Current Pulsed Forward Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax.
Symbol
VRM IF*1 IFP*2 Tj
Value 650
*1)
200 -40 to +175
Unit V A A °C
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values Min. Typ. Max.