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Rohm Semiconductor Electronic Components Datasheet

R6008FNJ Datasheet

MOSFET

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R6008FNJ
Nch 600V 8A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
0.95
8A
119W
Outline
LPTS
(SC-83)
(1)
(3)
(2)
Features
1) Low on-resistance.
Inner circuit
(2)
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1)
(1) Gate
(2) Drain
*1 (3) Source
*1 Body Diode
5) Parallel use is easy.
(3)
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packaging
Taping
Reel size (mm)
330
Application
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
24
1,000
TL
Marking
R6008FNJ
Absolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
8
3.9
32
30
4.3
3.4
4
119
150
55 to 150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2016.02 - Rev.C


Rohm Semiconductor Electronic Components Datasheet

R6008FNJ Datasheet

MOSFET

No Preview Available !

R6008FNJ
Absolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V, ID = 8A
Tj = 125°C
Values Unit
50 V/ns
Thermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 1.05 °C/W
- - 80 °C/W
- - 265 °C
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values
Min. Typ. Max.
Unit
600 - - V
Drain - Source avalanche
breakdown voltage
V(BR)DS VGS = 0V, ID = 8A
- 700 -
V
Zero gate voltage
drain current
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
-
-
A
1 100
- 10 mA
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
- 100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
2.0
-
4.0
V
Static drain - source
on - state resistance
VGS = 10V, ID = 4A
RDS(on) *6 Tj = 25°C
Tj = 125°C
- 0.73 0.95
- 1.62 -
Gate input resistance
RG f = 1MHz, open drain
-
8.0
-
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/13
2016.02 - Rev.C


Part Number R6008FNJ
Description MOSFET
Maker ROHM
Total Page 15 Pages
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