R6009JNJ
Nch 600V 9A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 0.585Ω
±9A 125W l Features
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; Ro HS pliant l Outline
LPT(S)
l Inner circuit
Datasheet
l Application Switching l Packaging specifications
Packing
Embossed Tape
Packing code
Marking
Quantity (pcs)
1000 l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain
- Source voltage
VDSS
Continuous drain current (Tc = 25°C)
ID- 1
±9
Pulsed drain current
IDP- 2
±27
Gate
- Source voltage
VGSS
±30
Avalanche current, single pulse
IAS-...
