R6009ENJ
Key Features
- 23 mJ Power dissipation (TC = 25°C) PD*4 94 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55～+150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/12
Datasheets by Manufacturer
- R6009ENJ — Inchange Semiconductor — N-Channel MOSFET
- R6009ENX — Inchange Semiconductor — N-Channel MOSFET
- R6009KNX — Inchange Semiconductor — N-Channel MOSFET
- R6009KNJ — Inchange Semiconductor — N-Channel MOSFET
- R6009JNJ — Inchange Semiconductor — N-Channel MOSFET
- R6009JND3 — Inchange Semiconductor — N-Channel MOSFET
- R6007JNX — Inchange Semiconductor — N-Channel MOSFET
- R6007JNJ — Inchange Semiconductor — N-Channel MOSFET
- R6006KNX — Inchange Semiconductor — N-Channel MOSFET
- R6006JND3 — Inchange Semiconductor — N-Channel MOSFET