Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

R6009ENX Datasheet

Manufacturer: Inchange Semiconductor
R6009ENX datasheet preview

R6009ENX Details

Part number R6009ENX
Datasheet R6009ENX-INCHANGE.pdf
File Size 247.81 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6009ENX page 2

R6009ENX Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 48 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6009ENX Key Features

  • Drain Current -ID= 9A@ TC=25℃ -Drain Source Voltage

Similar Datasheets

Brand Logo Part Number Description Manufacturer
ROHM Logo R6009ENX Power MOSFET ROHM
ROHM Logo R6009ENJ Power MOSFET ROHM
ROHM Logo R6009JND3 Power MOSFET ROHM

R6009ENX Distributor

More datasheets by Inchange Semiconductor

See all Inchange Semiconductor parts

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts