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R6009JNX

R6009JNX is N-Channel MOSFET manufactured by Inchange Semiconductor.
R6009JNX datasheet preview

R6009JNX Datasheet

Part number R6009JNX
Download R6009JNX Datasheet (PDF)
File Size 247.97 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6009JNX page 2

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R6009JNX Description

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 53 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6009JNX Key Features

  • Drain Current -ID=9A@ TC=25℃ -Drain Source Voltage

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