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R6009JND3

Manufacturer: Inchange Semiconductor
R6009JND3 datasheet preview

Datasheet Details

Part number R6009JND3
Datasheet R6009JND3-INCHANGE.pdf
File Size 261.74 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6009JND3 page 2

R6009JND3 Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6009JND3 Key Features

  • Drain Current -ID=9A@ TC=25℃ -Drain Source Voltage

R6009JND3 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ROHM Logo R6009JND3 Power MOSFET ROHM
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