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R6009JNJ - Power MOSFET

Datasheet Summary

Features

  • 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S) 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 l.

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Datasheet Details

Part number R6009JNJ
Manufacturer ROHM
File Size 1.45 MB
Description Power MOSFET
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Full PDF Text Transcription

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R6009JNJ 　　Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S) 　 　 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6009JNJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±9 A Pulsed drain current IDP*2 ±27 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 1.
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