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R6009ENJ Datasheet

Manufacturer: Inchange Semiconductor
R6009ENJ datasheet preview

R6009ENJ Details

Part number R6009ENJ
Datasheet R6009ENJ-INCHANGE.pdf
File Size 250.73 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6009ENJ page 2

R6009ENJ Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 94 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6009ENJ Key Features

  • Drain Current -ID= 9A@ TC=25℃ -Drain Source Voltage

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