ROHM Semiconductor R6004END
Power MOSFET
R6004END Nch 600V 4A Power MOSFET Datasheet VDSS 600V lOutline TO-252 RDS(on)(Max.) 0.98Ω SC-63 ID ±4.0A CPT3 PD lFeatures 58W lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6004E Unit Drain - Source voltage Continuous drain current Pulsed drain current TC = 25°C TC = 100°C VDSS ID*1 ID*1 IDP*2 600 V ±4.0 A ±2.2 A ±8.0 A Gate - Source voltage Static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, repetitive IAR*3 0.8 A Avalanche energy, single pulse EAS*3 46 mJ Avalanch