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Rohm Semiconductor Electronic Components Datasheet

R6076ENZ1 Datasheet

Nch 600V 76A Power MOSFET

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R6076ENZ1
Nch 600V 76A Power MOSFET
Data Sheet
VDSS
RDS(on) (Max.)
ID
PD
600V
0.042W
76A
120W
lOutline
TO-247
(1) (2) (3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Tube
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
450
C9
Marking
R6076ENZ1
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *3
IAR
PD
Tj
Tstg
dv/dt *4
600
76
41.3
228
20
1954
2.96
13.4
120
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/12
2014.03 - Rev.B


Rohm Semiconductor Electronic Components Datasheet

R6076ENZ1 Datasheet

Nch 600V 76A Power MOSFET

No Preview Available !

R6076ENZ1
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V
Tj = 125°C
Values Unit
50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA
Tsold
Values
Min. Typ. Max.
Unit
- - 1.04 °C/W
- - 30 °C/W
- - 265 °C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = 20V, VDS = 0V
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 44.4A
RDS(on) *5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Min. Typ. Max.
600 -
-
- 0.1 100
- - 1000
- - 100
2-4
- 0.038 0.042
- 0.085 -
- 0.7 -
Unit
V
mA
nA
V
W
W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/12
2014.03 - Rev.B


Part Number R6076ENZ1
Description Nch 600V 76A Power MOSFET
Maker ROHM
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R6076ENZ1 Datasheet PDF






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