Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

R6076ENZ1

Manufacturer: Inchange Semiconductor

R6076ENZ1 datasheet by Inchange Semiconductor.

R6076ENZ1 datasheet preview

R6076ENZ1 Datasheet Details

Part number R6076ENZ1
Datasheet R6076ENZ1-INCHANGE.pdf
File Size 298.75 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6076ENZ1 page 2

R6076ENZ1 Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 76 A IDM Drain Current-Single Pluse 228 A PD Total Dissipation @TC=25℃ 120 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6076ENZ1 Key Features

  • Drain Current -ID= 76A@ TC=25℃ -Drain Source Voltage

R6076ENZ1 from other manufacturers

View R6076ENZ1 datasheet index

Brand Logo Part Number Description Other Manufacturers
ROHM Logo R6076ENZ1 Nch 600V 76A Power MOSFET ROHM
Inchange Semiconductor logo - Manufacturer

More Datasheets from Inchange Semiconductor

View all Inchange Semiconductor datasheets

Part Number Description
R6002END3 N-Channel MOSFET
R6003KND3 N-Channel MOSFET
R6004ENJ N-Channel MOSFET
R6004ENX N-Channel MOSFET
R6004JND3 N-Channel MOSFET
R6004JNJ N-Channel MOSFET
R6004JNX N-Channel MOSFET
R6004KNJ N-Channel MOSFET
R6004KNX N-Channel MOSFET
R6006JND3 N-Channel MOSFET

R6076ENZ1 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts