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Rohm Semiconductor Electronic Components Datasheet

R6076MNZ1 Datasheet

MOSFET

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R6076MNZ1
  Nch 600V 76A Power MOSFET
   Datasheet
VDSS
600V
lOutline
 
RDS(on)(Max.)
0.055Ω
ID
±76A
TO-247
PD
740W
 
      
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
-
450
Taping code
C9
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6076MNZ1
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±76 A
Pulsed drain current
IDP*2
±228
A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*4 16 A
Avalanche energy, single pulse
EAS*4
68.7 mJ
Power dissipation (Tc = 25°C)
PD 740 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
1/11
20170605 - Rev.003    


Rohm Semiconductor Electronic Components Datasheet

R6076MNZ1 Datasheet

MOSFET

No Preview Available !

R6076MNZ1
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 0.168 /W
- - 30 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 38A
RDS(on)*3 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
   
- - 100 μA
---
- - ±100 nA
3.0 - 5.0 V
   
- 0.040 0.055 Ω
---
- 0.5 - Ω
                                                                                         
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2/11
20170605 - Rev.003


Part Number R6076MNZ1
Description MOSFET
Maker ROHM
Total Page 14 Pages
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