R6504ENJ
Nch 650V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 1.050Ω ±4.0A
58W l Features
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; Ro HS pliant l Outline
LPT(S)
l Inner circuit
Datasheet
l Application Switching l Packaging specifications
Packing
Embossed Tape
Packing code
Marking
Basic ordering unit (pcs)
1000 l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain
- Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID- 1 IDP- 2
±4.0
±12
Gate
- Source voltage
Static
AC(f＞1Hz)
VGSS
±20
±30
Avalanche current, single...
