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R6504KNJ
Nch 650V 4A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 1.050Ω ±4.0A
58W
lFeatures
1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
LPT(S)
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL
Marking
R6504KNJ
Basic ordering unit (pcs)
1000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID*1 IDP*2
650
V
±4.0
A
±12
A
Gate - Source voltage
Static
AC (f＞1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS
0.8
A
Avalanche energy, single pulse
EAS*3
34.
R6504KNJ Datasheet
