The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
R6507ENJ
Nch 650V 7A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
650V 0.665Ω
±7A 78W
lFeatures
1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
LPT(S)
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL
Marking
R6507ENJ
Quantity (pcs)
1000
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current
VDSS ID*1 IDP*2
650
V
±7
A
±21
A
Gate - Source voltage
static
AC(f＞1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS
1.
R6507ENJ Datasheet
