R8003KND3 Datasheet | ROHM

　　Nch 800V 3A Power MOSFET VDSS RDS(on)(Max.) ID PD 800V 1.8Ω ±3A 48W l Features 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; Ro HS pliant l Package TO-252 　 　 　 　 　　　　　　 l Inner circuit 　　 Datasheet 　 l Application Switching l Marking specification Marking R8003KND3 l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID- 1 IDP- 2 800 V ±3 A ±9 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse IAS EAS- 3 0.6 A 19 m J Power dissipation (Tc = 25°C) PD 48 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 .rohm. © 2019 ROHM Co., Ltd. All rights reserved. 1/11 - Rev.002 　...