R8003KND3 - Power MOSFET

ROHM

Datasheet Details

1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackage TO-252 　　　　　　　　　　 lInner circuit 　　 Datasheet 　 lApplication Switching lMarking specification Marking R8003KND3 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID.
1 IDP.
2 800 V ±3 A ±9 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V.

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