RD3G01BAT
Pch -40V -15A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-40V 39mΩ ±15A 25W l Features
1) Low on
- resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; Ro HS pliant l Outline
DPAK TO-252 l Inner circuit l Packaging specifications Packing
Reel size (mm) l Application Switching
Type Tape width (mm) Quantity (pcs)
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain
- Source voltage Continuous drain current Pulsed drain current Gate
- Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range
VDSS ID- 1 IDP- 2 VGSS IAS- 3 EAS- 3 PD- 1 Tj Tstg
-40 ±15 ±30 ±20 -15 18 25 150 -55 to +150
Embossed Tape 330 16 2500 TL1
Unit V A A V A m J W
℃ ℃
.rohm.
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RD3G01BAT l Thermal...
