RD3G04BBJHRB
RD3G04BBJHRB is Pch -40V -40A Power MOSFET manufactured by ROHM.
Pch -40V -40A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-40V 24.0mΩ
±40A 53W l Features Low on-resistance Pb-free plating;Ro HS pliant 100% Avalanche tested AEC-Q101 qualified l Outline
DPAK TO-252 l Inner circuit
Datasheet l Application ADAS/Info./Lighting/Body l Packaging specifications Packing
Reel size (mm)
Type Tape width (mm) Quantity (pcs)
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain
- Source voltage
VDSS
Continuous drain current
VGS = -10V
ID- 1
Pulsed drain current
IDP- 2
Gate
- Source voltage
VGSS
Avalanche current, single pulse
IAS- 3
Avalanche energy, single pulse
EAS- 3
Power dissipation
PD- 1
Junction temperature
Tj
Operating junction and storage temperature range
Tstg
-40 ±40 ±80 +5/-20 20 15.6 53 175 -55 to +175
Embossed Tape 330 16 2500 TL
RD3G04BBJ
Unit V A A V A m J W
℃...
