RD3P200SN
lThermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
RthJC*4
Values
Min. Typ. Max.
- - 6.25
Unit
℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25℃
IDSS VDS = 100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
ΔVGS(th) ID = 1mA
ΔTj referenced to 25℃
Static drain - source
on - state resistance
RDS(on)*5 VGS = 10V, ID = 20A
VGS = 4.0V, ID = 20A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*5 VDS = 10V, ID = 20A
Values
Unit
Min. Typ. Max.
100 - - V
- 116.9 - mV/℃
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -3.6 - mV/℃
- 33 46
mΩ
- 36 50
- 4.9 -
Ω
15 - - S
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20190527 - Rev.005
