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Rohm Semiconductor Electronic Components Datasheet

RD3P200SN Datasheet

Power MOSFET

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RD3P200SN
  Nch 100V 20A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
100V
46mΩ
±20A
20W
lFeatures
1) Low on - resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free lead plating ; RoHS compliant
lOutline
DPAK
TO-252
 
      
lInner circuit
 
lApplication
Switching
lPackaging specifications
Packing
Reel size (mm)
Tape width (mm)
Type Quantity (pcs)
Taping code
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD*4
Tj
Tstg
Value
100
±20
±80
±20
10
72
20
150
-55 to +150
Embossed
Tape
330
16
2500
TL
TL1
RD3P200SN
Unit
V
A
A
V
A
mJ
W
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/12
20190527 - Rev.005    


Rohm Semiconductor Electronic Components Datasheet

RD3P200SN Datasheet

Power MOSFET

No Preview Available !

RD3P200SN
          
lThermal resistance
Parameter
Thermal resistance, junction - case
                Datasheet
                    
Symbol
RthJC*4
Values
Min. Typ. Max.
- - 6.25
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
IDSS VDS = 100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*5 VGS = 10V, ID = 20A
VGS = 4.0V, ID = 20A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*5 VDS = 10V, ID = 20A
Values
Unit
Min. Typ. Max.
100 - - V
- 116.9 - mV/
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -3.6 - mV/
- 33 46
- 36 50
- 4.9 -
Ω
15 - - S
                                             
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/12
                                          
20190527 - Rev.005


Part Number RD3P200SN
Description Power MOSFET
Maker ROHM
PDF Download

RD3P200SN Datasheet PDF






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