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RF2001T3DFH Key Features

  • Construction Silicon epitaxial planar
  • Dimensions (Unit : mm)
  • Structure
  • Absoslute maximum ratings (Ta=25C)
  • Electrical characteristic (Ta=25C) Parameter

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RF2001T3DFH Description

Fast recovery diodes RF2001T3DFH Applications General rectification.

RF2001T3DFH Applications

  • Features 1) Cathode mon type