Super Fast Recovery Diode
RF202LAM2S
Datasheet
Series
Standard Fast Recovery
Applications
General rectification
Dimensions (Unit : mm)
2.50±0.20
(1)
0.17±
0.10
0.05
Land Size Figure (Unit : mm)
2.0
PMDTM
Features
1) Low forward voltage
2) Low switching loss
3) High current overload capacity
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM
JEDEC : SOD-128
: Manufacture Date
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
Structure Cathode
Anode
Absolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average forward rectified current
Io
Non-repetitive forward surge current IFSM
Junction temperature
Tj
Storage temperature
Tstg
Electrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal resistance
Rth(j-l)
Conditions
Limits Unit
Duty≦0.5
200 V
Direct reverse voltage
Glass epoxy board mounted,
60Hz half sin wave, resistive load
60Hz half sin wave,
non-repetitive at Tj=25ºC
Tｌ=102°C
-
200
2
20
150
V
A
A
°C
- 55 to 150 °C
Conditions
IF=2A
VR=200V
IF=0.5A, IR=1A, Irr=0.25×IR
Junction to lead
Min. Typ. Max. Unit
0.74 0.85 0.93 V
- - 10 A
- 14 25 ns
- - 25 °C/W
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2017.06 - Rev.A
