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Rohm Semiconductor Electronic Components Datasheet

RF4E080GN Datasheet

Nch 30V 8A Middle Power MOSFET

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RF4E080GN
  Nch 30V 8A Middle Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
30V
17.6mΩ
±8A
2W
lFeatures
1) Low on - resistance.
2) High power small mold package
  (HUML2020L8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen free
5) 100% Rg and UIS tested.
lOutline
DFN2020-8S
HUML2020L8
 
      
lInner circuit
lPackaging specifications
Packing
Reel size (mm)
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID
IDP*1
VGSS
IAS*2
EAS*2
PD*3
Tj
Tstg
30
±8
±32
±20
2.5
2.75
2
150
-55 to +150
 
Embossed
Tape
180
8
3000
TR
HC
Unit
V
A
A
V
A
mJ
W
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/10
20160212 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

RF4E080GN Datasheet

Nch 30V 8A Middle Power MOSFET

No Preview Available !

RF4E080GN
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*3
Values
Min. Typ. Max.
- - 62.5
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = VGS, ID = 250μA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
RDS(on)*4 VGS = 10V, ID = 8A
VGS = 4.5V, ID = 8A
Gate resistance
RG f=1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 5V, ID = 8A
Values
Unit
Min. Typ. Max.
30 - - V
- 28 - mV/
- - 1 μA
- - ±100 nA
1.0 - 2.5 V
- -3.87 - mV/
- 13.5 17.6
- 17.6 31.2
- 2.5 -
Ω
5 - -S
*1 Pw10μs , Duty cycle1%
*2 L 1mH, VDD = 15V, RG = 25Ω, STARTING Tj = 25Fig.3-1,3-2
*3 Mounted on Cu Board (40×40×0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/10
                                          
20160212 - Rev.002


Part Number RF4E080GN
Description Nch 30V 8A Middle Power MOSFET
Maker ROHM
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RF4E080GN Datasheet PDF






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