RFN2LAM4S
Key Features
- 50±0.20
- 95±0.10 ROHM : PMDTM JEDEC : SOD-128 : Manufacture Date lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) lStructure Cathode Anode lAbsolute Maximum Ratings (Tl= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward surge current IFSM Junction temperature Tj Storage temperature Tstg lElectrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal resistance Rth(j-l) Conditions Limits Unit Duty≦0.5 400 V Direct reverse voltage Glas
