Low forward voltage 2) Low switching loss 3) High current overload capacity
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM JEDEC : SOD-128
: Manufacture Date.
Construction Silicon epitaxial planar type.
Taping Dimensions (Unit : mm).
Structure Cathode
Anode.
Absolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average forward rectified current
Io
Non-repetitive forward surge current IFSM
Junction temperature
Tj
Stora.
Full PDF Text Transcription for RFN2LAM4STF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
RFN2LAM4STF. For precise diagrams, and layout, please refer to the original PDF.
Super Fast Recovery Diode RFN2LAM4STF Datasheet Series Dimensions (Unit : mm) AEC-Q101 Qualified Land Size Figure (Unit : mm) Standard Fast Recovery 2.50±0.20 0.17± 0....
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Land Size Figure (Unit : mm) Standard Fast Recovery 2.50±0.20 0.17± 0.10 0.05 2.0 3.70±0.20 4.70±0.14 1.4 4.4 (1) Applications General rectification PMDTM Features 1) Low forward voltage 2) Low switching loss 3) High current overload capacity (2) 1.50±0.20 0.95±0.
RFN2LAM4STF Datasheet
