1) Low forward voltage 2) Low switching loss 3) High current overload capacity
(2)
1.50±0.20
0.95±0.10
ROHM : PMDTM JEDEC : SOD-128
: Manufacture Date
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
lStructure Cathode
Anode
lAbsolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Average forward rectified current
Io
Non-repetitive forward surge current IFSM
Junction temperature
Tj
Storage temperatur.
Full PDF Text Transcription for RFN2LAM4S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
RFN2LAM4S. For precise diagrams, and layout, please refer to the original PDF.
Super Fast Recovery Diode RFN2LAM4S Data Sheet lSeries Standard Fast Recovery lApplications General rectification lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lL...
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rectification lDimensions (Unit : mm) 2.50±0.20 (1) 0.17± 0.10 0.05 lLand Size Figure (Unit : mm) 2.0 3.70±0.20 4.70±0.14 1.4 4.4 PMDTM lFeatures 1) Low forward voltage 2) Low switching loss 3) High current overload capacity (2) 1.50±0.20 0.95±0.
RFN2LAM4S Datasheet
