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Rohm Semiconductor Electronic Components Datasheet

RFN5TF8S Datasheet

Super Fast Recovery Diode

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Super Fast Recovery Diode
RFN5TF8S
zSerise
Standard Fast Recovery
zApplications
General rectification
zFeatures
1)Low switching Loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
zDimensions(Unit : mm)
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ROHM : O220NFM
ձ Manufacture Year
ղ Manufacture Week
Data Sheet
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
zElectrical Characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
VF
IR
trr
Rth(j-c)
Conditions
Duty0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=106°C
60Hz half sin wave , Non-repetitive at Tj=25°C
Conditions
IF=5A
VR=800V
IF=0.5A,IR=1A,Irr=0.25×IR
Junction to case
Min.
Limits
800
800
5
60
150
55 to 150
Typ. Max.
1.6 2.1
0.05 10
20 40
3.5
Unit
V
V
A
A
°C
°C
Unit
V
μA
ns
°C/W
WWWROHMCOM
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1/4
2012.06 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

RFN5TF8S Datasheet

Super Fast Recovery Diode

No Preview Available !

RFN5TF8S   Data Sheet
100
10
Tj=150°C
Tj=125°C
Tj=75°C
1
Tj=25°C
0.1
0
500 1000 1500 2000 2500 3000 3500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1800
1750
1700
1650
1600
1550
1500
1450
1400
IF=5A
Tj=25°C
AVE:1593mV
VF DISPERSION MAP
1000
f=1MHz
100
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100000
10000
1000
100
10
1
0
1000
100
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
200 400 600
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
800
VR=800V
Tj=25°C
AVE:75.0nA
10
IR DISPERSION MAP
180
175 f=1MHz
170 VR=0V
Tj=25°C
165
160
155 AVE:142pF
150
145
140
135
130
125
120
Ct DISPERSION MAP
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/4
2012.06 - Rev.A


Part Number RFN5TF8S
Description Super Fast Recovery Diode
Maker ROHM
Total Page 7 Pages
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