1)Low switching Loss 2)High current overload capacity
zConstruction Silicon epitaxial planer type
zDimensions(Unit : mm)
RFN5
TF8S
ձղ
ᖺ᭶
ROHM : O220NFM ձ Manufacture Year ղ Manufacture Week
Data Sheet
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
zElectrical Characteristics(Tj=25°C.
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Super Fast Recovery Diode
RFN5TF8S
zSerise Standard Fast Recovery
zApplications General rectification
zFeatures 1)Low switching Loss 2)High current overload capacity
zConstruction Silicon epitaxial planer type
zDimensions(Unit : mm)
RFN5
TF8S
ձղ
ᖺ᭶
ROHM : O220NFM ձ Manufacture Year ղ Manufacture Week
Data Sheet
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
zElectrical Characteristics(Tj=25°C) Parameter
Forward voltage Reverse current Reverse recovery time Thermal resistance
Symbol VF IR trr
Rth(j-c)
Conditions Duty0.