RGTV60TK65
Thermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Datasheet
Symbol
Rθ(j-c)
Values
Min. Typ. Max.
Unit
- - 1.97 °C/W
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650
-
-
Unit
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage Current
IGES VGE = 30V, VCE = 0V
-
- 200 nA
Gate - Emitter Threshold
Voltage
Collector - Emitter Saturation
Voltage
VGE(th) VCE = 5V, IC = 21.0mA 5.0
IC = 30A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
-
-
6.0
1.5
1.85
7.0
1.9
-
V
V
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2017.10 - Rev.A
