SCT3160KW7 Datasheet | ROHM

N-channel Si C power MOSFET VDSS RDS(on) (Typ.) ID- 1 PD 1200V 160mΩ 17A 100W l Outline TO-263-7L l Inner circuit l Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; Ro HS pliant l Application - Solar inverters - DC/DC converters - Switch mode power supplies - Induction heating - Motor drives Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. l Packaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Embossed tape 330 24 1000 TL SCT3160KW7 l Absolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Drain - Source Voltage Continuous Drain current Pulsed Drain current (Tc = 25°C) Gate - Source voltage (DC) Tc = 25°C Tc = 100°C Gate - Source surge voltage (tsurge < 300ns) Remended drive voltage Virtual Junction temperature VDSS ID - 1 ID - 1 ID,pulse - 2 VGSS VGSS_surge- 3 VGS_op- 4 Tvj Range of storage temperature Tstg Value Unit -4 to...