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Rohm Semiconductor Electronic Components Datasheet

SH8M51 Datasheet

Power MOSFET

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SH8M51
  100V Nch+Pch Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Pch
100V -100V
170mΩ 290mΩ
±3.0A ±2.5A
2.0W
lFeatures
1) Low on - resistance
2) Small Surface Mount Package (SOP8)
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
lOutline
SOP8
 
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
330
Switching
Type Tape width (mm)
Quantity (pcs)
12
2500
Taping code
TB
Marking
SH8M51
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Pch
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
total
Junction temperature
Operating junction and storage temperature range
VDSS
100 -100
V
ID
±3.0 ±2.5
A
IDP*1
±12 ±10
A
VGSS
±20 ±20
V
PD*2 2.0
W
PD*3 1.4
Tj 150
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/19
20190527 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

SH8M51 Datasheet

Power MOSFET

No Preview Available !

SH8M51
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 62.5
- - 89.2
Unit
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Tr1
V(BR)DSS
Tr2
 ΔV(BR)DSS  Tr1
   ΔTj     Tr2
VGS = 0V, ID = 1mA
VGS = 0V, ID = -1mA
ID = 1mA, referenced to 25
ID = -1mA, referenced to 25
Zero gate voltage
drain current
IDSS Tr1 VDS = 100V, VGS = 0V
Tr2 VDS = -100V, VGS = 0V
Gate - Source
leakage current
IGSS
Tr1 VGS = ±20V, VDS = 0V
Tr2 VGS = ±20V, VDS = 0V
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
VGS(th)
Tr1
Tr2
 ΔVGS(th)   Tr1
   ΔTj     Tr2
VDS = 10V, ID = 1mA
VDS = -10V, ID = -1mA
ID = 1mA, referenced to 25
ID = -1mA, referenced to 25
VGS = 10V, ID = 3.0A
Tr1 VGS = 4.5V, ID = 3.0A
Static drain - source
on - state resistance
RDS(on)*4
VGS = 4.0V, ID = 3.0A
VGS = -10V, ID = -2.5A
Tr2 VGS = -4.5V, ID = -1.25A
VGS = -4.0V, ID = -1.25A
Gate resistance
Tr1
RG
f=1MHz, open drain
Tr2
Forward Transfer
Admittance
|Yfs|*4 Tr1 VDS = 10V, ID = 3.0A
Tr2 VDS = -10V, ID = -2.5A
*1 Pw 10μs, Duty cycle 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
Values
Unit
Min. Typ. Max.
100 - -
V
-100 - -
- 116.9 -
mV/
- -91.3 -
- -1
μA
- - -1
- - ±10
μA
- - ±10
1.0 - 2.5
V
-1.0 - -2.5
- -3.6 -
mV/
- 3.0 -
- 120 170
- 130 180
- 135 190
- 210 290
- 230 320
- 240 340
- 6.9 -
- 6.8 -
Ω
3.5 - -
S
3.5 - -
                                                                                               
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/19
20190527 - Rev.002


Part Number SH8M51
Description Power MOSFET
Maker ROHM
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SH8M51 Datasheet PDF






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