SH8M51
lThermal resistance
Parameter
Thermal resistance, junction - ambient
total
Datasheet
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 62.5
- - 89.2
Unit
℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Type
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Tr1
V(BR)DSS
Tr2
ΔV(BR)DSS Tr1
ΔTj Tr2
VGS = 0V, ID = 1mA
VGS = 0V, ID = -1mA
ID = 1mA, referenced to 25℃
ID = -1mA, referenced to 25℃
Zero gate voltage
drain current
IDSS Tr1 VDS = 100V, VGS = 0V
Tr2 VDS = -100V, VGS = 0V
Gate - Source
leakage current
IGSS
Tr1 VGS = ±20V, VDS = 0V
Tr2 VGS = ±20V, VDS = 0V
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
VGS(th)
Tr1
Tr2
ΔVGS(th) Tr1
ΔTj Tr2
VDS = 10V, ID = 1mA
VDS = -10V, ID = -1mA
ID = 1mA, referenced to 25℃
ID = -1mA, referenced to 25℃
VGS = 10V, ID = 3.0A
Tr1 VGS = 4.5V, ID = 3.0A
Static drain - source
on - state resistance
RDS(on)*4
VGS = 4.0V, ID = 3.0A
VGS = -10V, ID = -2.5A
Tr2 VGS = -4.5V, ID = -1.25A
VGS = -4.0V, ID = -1.25A
Gate resistance
Tr1
RG
f=1MHz, open drain
Tr2
Forward Transfer
Admittance
|Yfs|*4 Tr1 VDS = 10V, ID = 3.0A
Tr2 VDS = -10V, ID = -2.5A
*1 Pw ≦ 10μs, Duty cycle ≦ 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
Values
Unit
Min. Typ. Max.
100 - -
V
-100 - -
- 116.9 -
mV/℃
- -91.3 -
- -1
μA
- - -1
- - ±10
μA
- - ±10
1.0 - 2.5
V
-1.0 - -2.5
- -3.6 -
mV/℃
- 3.0 -
- 120 170
- 130 180
- 135 190
mΩ
- 210 290
- 230 320
- 240 340
- 6.9 -
- 6.8 -
Ω
3.5 - -
S
3.5 - -
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20190527 - Rev.002
