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SH8M11 - Nch+Pch MOSFET

Datasheet Summary

Features

  • 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).
  • Dimensions (Unit : mm) SOP8 (8) (5) (1) (4).

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Datasheet Details

Part number SH8M11
Manufacturer ROHM
File Size 1.41 MB
Description Nch+Pch MOSFET
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Data Sheet 4V Drive Nch + Pch MOSFET SH8M11  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching  Packaging specifications Type SH8M11 Package Code Basic ordering unit (pieces) Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP *1 Is Isp *1 PD Tch Tstg *2 Limits Tr1 : N-ch Tr2 : P-ch 30 20 3.5 14 1.6 14 30 20 3.5 12 1.
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