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Rohm Semiconductor Electronic Components Datasheet

SP8K22FRA Datasheet

Power MOSFET

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SP8K22FRA
  45V Nch+Nch Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
45V
46mΩ
±4.5A
2.0W
lFeatures
1) Low on - resistance
2) Small Surface Mount Package (SOP8)
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
5) AEC-Q101 Qualified
lOutline
SOP8
 
      
lInner circuit
   Datasheet
 
lApplication
Switching
lPackaging specifications
Packing
Reel size (mm)
Type Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
330
12
2500
TB
SP8K22
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
45 V
Continuous drain current
Pulsed drain current
ID ±4.5 A
IDP*1 ±18 A
Gate - Source voltage
VGSS
±20 V
Power dissipation (total)
PD*2 2.0
W
PD*3 1.4
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20161028 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

SP8K22FRA Datasheet

Power MOSFET

No Preview Available !

SP8K22FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient (total)
                Datasheet
                       
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 62.5
- - 89.2
Unit
/W
lElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
V(BR)DSS VGS = 0V, ID = 1mA
ΔV(BR)DSS ID = 1mA
  ΔTj  referenced to 25
IDSS VDS = 45V, VGS = 0V
IGSS VDS = 0V, VGS = ±20V
VGS(th) VDS = 10V, ID = 1mA
ΔVGS(th) ID = 1mA
  ΔTj  referenced to 25
VGS = 10V, ID = 4.5A
RDS(on)*4 VGS = 4.5V, ID = 4.5A
VGS = 4.0V, ID = 4.5A
RG f = 1MHz, open drain
|Yfs|*4 VDS = 10V, ID = 4.5A
Values
Min. Typ. Max.
   
Unit
45 - - V
- 46.8 - mV/
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -3.9 - mV/
- 33 46
- 41 57 mΩ
- 46 64
- 5.0 - Ω
3.5 - - S
*1 Pw 10μs, Duty cycle 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
                                                                                               
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/11
20161028 - Rev.001



Part Number SP8K22FRA
Description Power MOSFET
Maker ROHM
Total Page 15 Pages
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