* Fast Switching
* Low ON Resistance(Rdson≤0.47Ω)
* Low Gate Charge(Typical Data:12nC)
* Low Reverse Transfer Capacitances(Typical:7pF)
* 100% Single .

* Used in various power switching circuit for system miniaturization and higher efficiency.
* Automotive,DC Moto.

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 250V RDS(on) （TYP)= .

E8NE60

E80CC

E80CF

E80F

E80L

E80T

E810F

E818AHF

E81CC

E81L

E820xxx

E82CC

E83CC