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I25N10 Datasheet Preview

I25N10 Datasheet

25A 100V N-channel Enhancement Mode Power MOSFET

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25N10/F25N10/I25N10/
E25N10/B25N10/D25N10
25A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used
advanced trench technology design, provided excellent
RDSON and low gate charge. Which accords with the
RoHS standard.
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤36mΩ)
● Low Gate Charge(Typical:61nC)
● Low Reverse Transfer Capacitances(Typical:84pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Power switching applications
● LED Boost
● UPS power supply
● Load switch
VDSS = 100V
RDS(on) TYP)= 30mΩ
ID = 25A
TO-220C TO-220F TO-262
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)
Parameter
Symbol
Value
25N10/I25N10/E25N10
/B25N10/D25N10
Maximum Drian-Source DC Voltage
VDS
100
Maximum Gate-Drain Voltage
VGS ±20
Drain Current(continuous)
IDT=25℃)
T=100℃)
30
21
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Avalanche Current(Note 1)
Total Dissipation
Ta=25
TC=25
IDM
EAS
IAS
Ptot
Ptot
90
36
12
2
88
Junction Temperature
storage Temperature
Tj 175
Tstg -55175
Maximum Temperature for soldering
TL
300
F25N10
2
35
Units
V
V
A
A
A
mJ
A
W
W
4.2 Thermal Characteristics
Parameter
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
Symbol
RthJC
RthJA
Value
25N10/I25N10/E25N10
/B25N10/D25N10
1.7
75
F25N10
4.29
75
Unit
/W
/W
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 1 of 11
Rev. 1.0




ROUM

I25N10 Datasheet Preview

I25N10 Datasheet

25A 100V N-channel Enhancement Mode Power MOSFET

No Preview Available !

25N10/F25N10/I25N10/
E25N10/B25N10/D25N10
4.3 Electrical Characteristics(Tc=25,unless otherwise noted)
Parameter
Symbol
Test Condition
Off Characteristics
Drain-source
Breakdown Voltage
BVDSS
ID=250μA,VGS=0V
Drain-to-Source
Leakage Current
IDSS
VDS=100V,VGS=0V,TC=25
VDS=80V,VGS=0V,TC=125
Gate-to-Source
Forward Leakage
IGSSF
VGS=+20V
Gate-to-Source
Reverse Leakage
IGSSR
VGS=-20V
On Characteristics(Note 3)
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-source on Resist
ance
RDS(on)
VGS=10V,ID=12A
VGS=4.5V,ID=10A
Dynamic Characteristics(Note 4)
Forward Transfer cond
uctance
gfs
VDS=5V,ID=12A
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Cap
acitance
Coss
Crss
VGS=0V,VDS=50V,f=1.0MHz
Gate Resisitance
RG VDS=0V,VGS=0V,F=1MHz
Switching Characteristics(note4)
Turn-on Delay Time
Turn-on Rise Time
td(on)
tr
VDS=50V,
ID=12A,
Turn-off Delay Time
Turn-off Fall Time
td(off)
tf
VGS=10V,
RGEN=3Ω
Total Gate Charge
Qg
Gate-to-Source Charge
Gate-to-Drain(“Miller”)C
harge
Qgs
Qgd
ID=12A,VDS=80V,VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VFSD
VGS=0V,IS=12A
Diode Forward Current
(Note 2)
IS
Reverse Recovery Time
Reverse Recovery
Charge
trr
Qrr
TJ=25,IF=12A,
dIF/dt=100A/μS,VGS=0V
Value
Min Typ Max
100 --
--
-- --
1
-- -- 100
-- -- 100
-- -- -100
1.2 -- 2.5
-- 30 36
-- 32 40
-- 59
-- 3540
-- 107
-- 84
-- 1.3
-- 13
-- 26
-- 77
-- 17
-- 61
-- 7.1
-- 14
--
--
--
--
--
--
--
--
--
--
--
--
-- 0.8 1.2
-- -- 30
-- 50 --
-- 75 --
Units
V
μA
μA
nA
nA
V
S
pF
Ω
nS
nS
nS
nS
nC
V
A
nS
nC
Notes
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=0.5mH,ID=12A,VDD=50V,VGATE=100V,Start TJ=25.
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 2 of 11
Rev. 1.0


Part Number I25N10
Description 25A 100V N-channel Enhancement Mode Power MOSFET
Maker ROUM
Total Page 11 Pages
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