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I2N60 ROUM 2A 600V N-channel Enhancement Mode Power MOSFET

Title N채널 600V 2A(Tc) 57W(Tc) 스루홀 TO-251A
Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) (TYP)= 4.0Ω ID = 2A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤4.5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.8pF) ● ...
Features
● Fast Switching
● Low ON Resistance(Rdson≤4.5Ω)
● Low Gate Charge(Typ:8nC)
● Low Reverse Transfer Capacitances(Typ:3.8pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ...

Datasheet PDF File I2N60 Datasheet - 1.42MB
Distributor Distributor
DigiKey
Stock 0 In stock
Price
3500 units: 359.16513 KRW
BuyNow BuyNow BuyNow - Manufacturer a Alpha & Omega Semiconductor AOI2N60A

I2N60   I2N60   I2N60  



I2N60 Distributor

Distributor Stock Price BuyNow
Distributor
DigiKey
0
3500 units: 359.16513 KRW
Alpha & Omega Semiconductor

BuyNow




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