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I2N60 Datasheet Preview

I2N60 Datasheet

2A 600V N-channel Enhancement Mode Power MOSFET

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2N60/F2N60/I2N60/E2N60/B2N60/D2N60
2A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the
self-aligned planar technology which reduce the conduction
loss, improve switching performance and enhance the
avalanche energy. Which accords with the RoHS standard.
VDSS = 600V
RDS(on) TYP)= 4.0Ω
ID = 2A
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤4.5Ω)
● Low Gate Charge(Typ:8nC)
● Low Reverse Transfer Capacitances(Typ:3.8pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
TO-220C TO-220F
TO-262
3 Applications
● used in various power switching circuit for system
miniaturization and higher efficiency.
● Power switch circuit of electron ballast and
adaptor.
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted)
Parameter
Symbol
Drian-Source Voltage
Gate-Drain Voltage
Drain Current(continuous)
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Avalanche Energy Repetitive(Note 1)
Avalanche Current(Note 1)
Peak Diode Recovery dv/dt(Note 6)
Total Dissipation
Ta=25
TC=25
Junction Temperature
storage Temperature
Maximum Temperature for soldering
VDS
VGS
IDT=25℃)
T=100℃)
IDM
EAS
EAR
IAR
dv/dt
Ptot
Ptot
Tj
Tstg
TL
TO-263
TO-252B
TO-251B
Value
2N60/I2N60/E2N60
/B2N60/D2N60
600
±30
2
1.26
8
64
6.4
3.6
5
2
35
150
-55150
300
F2N60
2
20
Units
V
V
A
A
A
mJ
mJ
A
V/ns
W
W
4.2 Thermal Characteristics
Parameter
Thermal Resistance Junction to Case-sink
Thermal Resistance Junction to Ambient
Symbol
RthJC
RthJA
Value
2N60/I2N60/E2N60
/B2N60/D2N60
3.57
62.5
F2N60
6.25
62.5
Units
/W
/W
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 1 of 12
Rev. 1.0




ROUM

I2N60 Datasheet Preview

I2N60 Datasheet

2A 600V N-channel Enhancement Mode Power MOSFET

No Preview Available !

2N60/F2N60/I2N60/E2N60/B2N60/D2N60
4.3 Electrical Characteristics(Tc=25,unless otherwise noted)
Parameter
Symbol
Test Condition
Off Characteristics
Drain-source Breakdown
Voltage
Drain-to-Source Leakage
Current
BVDSS
IDSS
Gate-to-Source Forward
Leakage
IGSSF
Gate-to-Source Reverse
Leakage
IGSSR
On Characteristics(Note 3)
Gate threshold voltage
VGS(th)
Drain-source on Resistan
ce
RDS(on)
Dynamic Characteristics(Note 4)
Forward Transfer conduc
tance
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacit
ance
Crss
Switching Characteristics(note4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain(“Miller”)C
harge
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage(N
ote 3)
VFSD
Diode Forward Current(N
ote 2)
IS
Reverse Recovery Time
Reverse Recovery
Charge
Reverse Recovery
Current
trr
Qrr
IRRM
ID=250μA,VGS=0V
VDS=600V,VGS=0V,TC=25
VDS=480V,VGS=0V,TC=125
VGS=+30V
VGS=-30V
VDS=VGS,ID=250μA
VGS=10V,ID=1A
VDS=15V,ID=1A
VGS=0V,VDS=25V,f=1.0MHz
ID=2A,
VDD=300V,
VGS=10V,
RG=18Ω
ID=2A,VDD=480V,VGS=10V
VGS=0V,IS=2A
TJ=25,IF=2A,
dIF/dt=100A/μS,VGS=0V
Value
min typ max
600 --
--
-- -- 1
-- -- 100
-- -- 100
-- -- -100
2 -- 4
-- 4 4.5
2 -- --
-- 280 --
-- 30 --
-- 3.8 --
-- 7.8 --
-- 5.5 --
-- 33 --
-- 16 --
-- 8.5 --
-- 1.5 --
-- 4 --
-- -- 1.5
-- -- 2
-- 80 --
-- 180 --
-- 4.5 --
Units
V
μA
μA
nA
nA
V
Ω
S
pF
nS
nS
nS
nS
nC
V
A
nS
nC
A
Notes
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=10mH,ID=3.58A,VDD=50V,VGATE=600V,Start TJ=25.
6. ISD=2A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25.
ROUM Semiconductor Technology CO.,LTD.
www.roum.cn
Page 2 of 12
Rev. 1.0


Part Number I2N60
Description 2A 600V N-channel Enhancement Mode Power MOSFET
Maker ROUM
Total Page 12 Pages
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