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I2N60 - N-Channel Power MOSFET

Datasheet Summary

Description

The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.

threshold voltage of 4 volts.

They are designed for use in applications such as switched mode power supplies.

Features

  • RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max. ) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature.

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Datasheet Details

Part number I2N60
Manufacturer nELL
File Size 330.99 KB
Description N-Channel Power MOSFET
Datasheet download datasheet I2N60 Datasheet
Additional preview pages of the I2N60 datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
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