I2N60 Datasheet PDF | Nell Power Semiconductor

Nell Power Semiconductor I2N60

The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. They are designed for use in applications such as switched mode power supplies.

Part No.	I2N60
Datasheet	I2N60 Download
Manufacturer	Nell Power Semiconductor
Description	N-Channel Power MOSFET
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DESCRIPTION

threshold voltage of 4 volts. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.

FEATURES

RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 12 600 0.8 @ VGS = 10V 54 D GDS TO-220AB (12N60A) GDS TO-220F (12N60AF) D (Drain) G (Gate) S (Source)

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) TC=25°C TC=100°C lAR=12A,RGS=50Ω, VGS=10V EAS Single pulse avalanche energy (Note 2) lAS=12A, L = 10mH dv/dt Peak diode recove...

I2N60 Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
I2N60	ROUM