ROUM I2N60
2A 600V N-channel Enhancement Mode Power MOSFET
| Part No. | I2N60 |
|---|---|
| Datasheet | I2N60 Download |
| Manufacturer | ROUM |
| Description | 2A 600V N-channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 4.0Ω ID = 2A 2FEATURES
● Fast Switching● Low ON Resistance(Rdson≤4.5Ω)
● Low Gate Charge(Typ:8nC)
● Low Reverse Transfer Capacitances(Typ:3.8pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test TO-220C TO-220F TO-262 3
APPLICATIONS
● used in various power switching circuit for system miniaturization and higher efficiency.● Power switch circuit of electron ballast and adaptor. 4
ELECTRICAL CHARACTERISTICS
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Drian-Source Voltage Gate-Drain Voltage Drain Current(continuous) Drain Current(Pulsed)(Note 1) Single Pulse Avalanche E
