I2N60 - 2A 600V N-channel Enhancement Mode Power MOSFET
General Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
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I2N60. For precise diagrams, and layout, please refer to the original PDF.
2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned plana...
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se N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 4.0Ω ID = 2A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤4.5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and a
I2N60 Datasheet
