| Part Number | I2N60 Datasheet |
|---|---|
| Manufacturer | ROUM |
| Overview |
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi.
* Fast Switching * Low ON Resistance(Rdson≤4.5Ω) * Low Gate Charge(Typ:8nC) * Low Reverse Transfer Capacitances(Typ:3.8pF) * 100% Single Pulse Avalanche Energy Test * 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications * used in various power switching circuit for system miniaturization and high. |
I2N60 Datasheet and Specifications PDF
The I2N60 is a 2A 600V N-channel Enhancement Mode Power MOSFET.
Key Specifications
| Package | TO-251-3 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -50 °C |
| Part Number | I2N60 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Nell Power Semiconductor |
| Overview | The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage. RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 12 600 0.8 @ V. |