I8NE60 - 7.5A 600V N-channel Enhancement Mode Power MOSFET

I8NE60 Datasheet Preview — Preview of I8NE60 PDF

Datasheet Details

Part number	I8NE60
Manufacturer	ROUM
File Size	1.34 MB
Description	7.5A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	I8NE60-ROUM.pdf

I8NE60 Product details

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
ESD Improved Capability.
Low ON Resistance(Rdson≤1.3Ω).
Low Gate Charge(Typical Data:24nC).
Low Reverse Transfer Capacitances(Typical:5.5pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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