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FM18W08 - 256Kb Wide Voltage Bytewide F-RAM

Description

The FM18W08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM.

Features

  • 256Kbit Ferroelectric Nonvolatile RAM.
  • Organized as 32,768 x 8 bits.
  • High Endurance 100 Trillion (1014) Read/Writes.
  • 38 year Data Retention.
  • NoDelay™ Writes.
  • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules.
  • No Battery Concerns.
  • Monolithic Reliability.
  • True Surface Mount Solution, No Rework Steps.
  • Superior for Moisture, Shock, and Vibration.
  • Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible.
  • JEDEC 3.

📥 Download Datasheet

Datasheet preview – FM18W08

Datasheet Details

Part number FM18W08
Manufacturer Ramtron
File Size 491.12 KB
Description 256Kb Wide Voltage Bytewide F-RAM
Datasheet download datasheet FM18W08 Datasheet
Additional preview pages of the FM18W08 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM  Organized as 32,768 x 8 bits  High Endurance 100 Trillion (1014) Read/Writes  38 year Data Retention  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules  No Battery Concerns  Monolithic Reliability  True Surface Mount Solution, No Rework Steps  Superior for Moisture, Shock, and Vibration  Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible  JEDEC 32Kx8 SRAM & EEPROM pinout  70 ns Access Time  130 ns Cycle Time Low Power Operation  Wide Voltage Operation 2.7V to 5.5V  12 mA Active Current  20 A (typ.
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