F-RAM Datasheet | Specifications & PDF Download

Confidential CECT rum SC6531E and SC6531M DeFvoirce Specification Confidential Spreadtrum CECT For Confidentiwalww.spreadtrum.com Spreadtrum C

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Ordering number : EN4163A Asynchronous Silicon Gate CMOS LSI LC36256AL, AML-70/85/10/12 256 K (32768 words × 8 bits) SRAM Overview The LC36256AL, A

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WESTERN DIGITAL c oRp o R A T/ oN PT 1482-01 (PSAT) Programmable Synchronous & Asynchronous Transmitter FEATURES o SYNCHRONOUS, ASYNCHRONOUS OR ISOC

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GS840Z18CGT/GS840Z36CGT 100-Pin TQFP Commercial Temp Industrial Temp 4Mb Pipelined and Flow Through Synchronous NBT SRAMs 250 MHz–100 MHz 3.3 V VDD

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MACH 1 and 2 CPLD Families High-Performance EE CMOS Programmable Logic FEATURES x High-performance electrically-erasable CMOS PLD families x 32 to 128

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Hyper 3 mm (T1) LED, Diffused Hyper-Bright, Wide-Angle LED LS 3386, LA 3386, LO 3386, LY 3386 Besondere Merkmale • Gehäusetyp: eingefärbtes, diffuses

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® LY62L1024 Rev. 1.2 128K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised Icc De

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TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551 001 BPL is a 1,048,576 bit CMOS

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FEATURES EPROM Technology for reprogramming High Speed – 25/35/45/55 ns (Commercial) – 25/35/45/55 ns (Military) Low Power Operation: – 66

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256K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. IDT7MP4045 IDT7MP4145 FEATURES: • High density 1 megabyte static RAM module (IDT

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www.DataSheet4U.com Programmable Frequency Sweep and Output Burst Waveform Generator AD5930 FEATURES Programmable frequency profile No external compo

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240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 1Gb version C DDR2

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PRELIMINARY PRoC™ BLE: CYBL1XX7X Family Datasheet Programmable Radio-on-Chip With Bluetooth Low Energy General Description PRoC™ BLE is a 32-bit,

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Programmable Clock Generator 5P49V5907 DATASHEET Description The 5P49V5907 is a programmable clock generator intended for high performance consumer

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4M x 16-Bit Dynamic RAM ( 8k, 4k & 2k Refresh) HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Advanced Infor

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SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan

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Ordering number : EN4163A Asynchronous Silicon Gate CMOS LSI LC36256AL, AML-70/85/10/12 256 K (32768 words × 8 bits) SRAM Overview The LC36256AL, A

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