N02L63W3A Datasheet (ON Semiconductor) - Ultra-Low Power Asynchronous CMOS SRAM

N02L63W3A, Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A16 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground Rev.

15 | Page 2 of 11 | www.onsemi.com N02L63W3A Functional Blo

N02L63W3A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit Overview The N02L63W3A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits.

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.

Byte controls (UB and LB) a

N02L63W3A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts

* Very low standby current 2.0µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)

* Simple memory control Sin