N01L1618N1A Datasheet - NanoAmp Solutions

N01L1618N1A Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A15 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground N01L1618N1A TSOP I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) 6 .

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L1618N1A www.DataSheet4U.com 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L1618N1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low powe.

N01L1618N1A Features

* Single Wide Power Supply Range 1.65 to 2.2 Volts

* Very low standby current 0.5µA at 1.8V (Typical)

* Very low operating current 0.7mA at 1.8V and 1µs (Typical)

* Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)

* Simple memory control Si

N01L1618N1A_NanoAmpSolutions.pdf