N01L0818L1A datasheet, sram equivalent, NanoAmp Solutions

N01L0818L1A Features and benefits

* Single Wide Power Supply Range 1.4 to 2.3 Volts - STSOP package
* Dual Power Supply - Die Only 1.4 to 2.3 Volts - VCC 1.4 to 3.6 Volts - VCCQ
* Very low sta.

N01L0818L1A Application

This device comprises a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed.

N01L0818L1A Description

Pin Name A0-A16 WE CE1, CE2 OE I/O0-I/O7 VCCQ VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Output Power (die only) Power Ground N01M0818L1A STSOP Stock No. 23205-01 11/01/02 The s.

Image gallery

TAGS

📁 Related Datasheet

N01L083WC2A - Ultra-low Power SRAMs (NanoAmp Solutions)
www..com NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L083WC2A 1M.

N01L1618N1A - Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L1618N1A www.D.

N01L163WC2A - Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L163WC2A www..com 1M.

N01L163WN1A - Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L163WN1A www.D.

N01L6183A - 1Mb Ultra-Low Power Asynchronous CMOS SRAM (ON Semiconductor)
N01L6183A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L6183A is an integrated memory device containing a 1 Mbit Static Ran.

N01L63W2A - Ultra-Low Power Asynchronous CMOS SRAM (ON Semiconductor)
N01L63W2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L63W2A is an integrated memory device containing a 1 Mbit Static Ran.

N01L63W3A - Ultra-Low Power Asynchronous CMOS SRAM (ON Semiconductor)
N01L63W3A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L63W3A is an integrated memory device containing a 1 Mbit Static Ran.

N01L83W2A - Ultra-Low Power Asynchronous CMOS SRAM (ON Semiconductor)
N01L83W2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit Overview The N01L83W2A is an integrated memory device containing a 1 Mbit Static Ran.

N0118GA - SCR (WeEn)
N0118GA SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier with ultra-sensitive gate in a.

N0131SH120 - Phase Control Thyristor (IXYS)
Date:- 23rd Sept 2014 Data Sheet Issue:- 3 Phase Control Thyristor Types N0131SH120 to N0131SH160 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOL.

N01L0818L1A Datasheet, sram equivalent, NanoAmp Solutions

PDF File Details

N01L0818L1A Features and benefits

N01L0818L1A Application

N01L0818L1A Description