N01L83W2A Datasheet - ON Semiconductor

N01L83W2A Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A16 WE CE1, CE2 OE I/O0-I/O7 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Power Ground Not Connected 32-Pin STSOP-I TSOP-I ©2008 SCILLC. All rights reserved. July 2008 - Rev. 10 Publication Order Number: N01L83W2A.

N01L83W2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit Overview The N01L83W2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L83W2A is optima.

N01L83W2A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts

* Very low standby current 2.0µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)

* Simple memory control Dua

N01L83W2A_ONSemiconductor.pdf