N01L63W3A Datasheet (ON Semiconductor) - Ultra-Low Power Asynchronous CMOS SRAM

N01L63W3A, Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A15 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground N01L63W3A TSOP I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) 6 x

N01L63W3A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L63W3A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits.

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.

Byte controls (UB and LB) al

N01L63W3A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts

* Very low standby current 2.0µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)

* Simple memory control Sin