F0118J Datasheet - OSRAM

GaAs Infrared Emitting Diode

F0118J Features

* Typ. total radiant power: 22 mW @ 100 mA in Topled® package.

* Chip size 300 x 300 µm2

* Very highly efficient GaAlAs LED

* High reliability

* High pulse handling capability

* Good spectral match to silicon photodetectors

* Frontside metalliz

F0118J General Description

Infrarot emittierender Chip, Oberseite Anodenanschluss Rückseite AuGe Eutektikum Infrared emitting die, top side anode connection Backside AuGe eutectic alloy 2002-02-21 1 F 0118J Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C) Electrical values (measured on TO18 header.

F0118J Datasheet (58.94 KB)

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Datasheet Details

Part number:

F0118J

Manufacturer:

OSRAM

File Size:

58.94 KB

Description:

Gaas infrared emitting diode.
GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data .

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F0118J GaAs Infrared Emitting Diode OSRAM

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F0118J Features

F0118J General Description

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