F0118J GaAs Infrared Emitting Diode

OSRAM

Description

GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data .
Infrarot emittierender Chip, Oberseite Anodenanschluss Rückseite AuGe Eutektikum Infrared emitting die, top side anode connection Backside AuGe eutect.

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Datasheet Specifications

Part number: F0118J
Manufacturer: OSRAM
File Size: 58.94 KB
Datasheet: F0118J_OSRAM.pdf
Description: GaAs Infrared Emitting Diode

Features

* Typ. total radiant power: 22 mW @ 100 mA in Topled® package.
* Chip size 300 x 300 µm2
* Very highly efficient GaAlAs LED
* High reliability
* High pulse handling capability
* Good spectral match to silicon photodetectors
* Frontside metalliz

Applications

* IR remote control for hifi and TV sets, video tape recorder, dimmers
* Remote control for steady and varying intensity
* Light-reflection switches (max. 500 kHz)
* Sensor technology Typ Type F 0118J Bestellnummer Ordering Code Q67220-C1350 Beschreibung Descriptio

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F0118J GaAs Infrared Emitting Diode OSRAM

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