F0118J - GaAs Infrared Emitting Diode

OSRAM

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Datasheet Details

Part number	F0118J
Manufacturer	OSRAM
File Size	58.94 KB
Description	GaAs Infrared Emitting Diode
Datasheet	F0118J_OSRAM.pdf

F0118J Product details

Description

Infrarot emittierender Chip, Oberseite Anodenanschluss Rückseite AuGe Eutektikum Infrared emitting die, top side anode connection Backside AuGe eutectic alloy 2002-02-21 1 F 0118J Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C) Electrical values (measured on TO18 header without resin, TA = 25 °C) Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission IF = 10 mA Spektrale Bandbreite bei 50% von Imax, IF = 10 mA Spectral bandwidth at 50% of Imax S

Features

Typ. total radiant power: 22 mW @ 100 mA in Topled® package.
Chip size 300 x 300 µm2.
Very highly efficient GaAlAs LED.
High reliability.
High pulse handling capability.
Good spectral match to silicon photodetectors.
Frontside metallization: aluminum Backside metallization: gold alloy.

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Published: Apr 14, 2005 |