F0118G GaAs Infrared Emitting Diode

OSRAM

Description

GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary .
Infrarot emittierender Chip, Oberseite Anodenanschluß, Infrared emitting die, top side anode connection 2003-04-10 1 F 0118G Elektrische Werte (TA.

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Datasheet Specifications

Part number: F0118G
Manufacturer: OSRAM
File Size: 66.76 KB
Datasheet: F0118G_OSRAM.pdf
Description: GaAs Infrared Emitting Diode

Features

* Typ. total radiant power: 24 mW @ 100 mA in TOPLED® package.
* Chip size 300 x 300 µm2
* Peak wavelength: 950 nm
* Very highly efficient GaAs LED
* Good linearity (Ie = f [IF]) at high currents
* DC or pulsed operations are possible
* High re

Applications

* IR remote control for hifi and TV sets, video tape recorder, dimmers
* Remote control for steady and varying intensity
* Light-reflection switches (max. 500 kHz)

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F0118G GaAs Infrared Emitting Diode OSRAM

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