F0118G - GaAs Infrared Emitting Diode

OSRAM

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Datasheet Details

Part number	F0118G
Manufacturer	OSRAM
File Size	66.76 KB
Description	GaAs Infrared Emitting Diode
Datasheet	F0118G_OSRAM.pdf

F0118G Product details

Description

Infrarot emittierender Chip, Oberseite Anodenanschluß, Infrared emitting die, top side anode connection 2003-04-10 1 F 0118G Elektrische Werte (TA = 25 °C) Electrical values1) (TA = 25 °C) Bezeichnung Parameter Emissionswellenlänge Peak wavelength IF = 10 mA Spektrale Bandbreite bei 50% von Imax, Spectral bandwidth at 50% of Imax IF = 10 mA Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL

Features

Typ. total radiant power: 24 mW @ 100 mA in TOPLED® package.
Chip size 300 x 300 µm2.
Peak wavelength: 950 nm.
Very highly efficient GaAs LED.
Good linearity (Ie = f [IF]) at high currents.
DC or pulsed operations are possible.
High reliability.
High pulse handling capability.

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Published: Apr 14, 2005 |